Top > Press Releases > Back Issues > May 2010 > Enhanced Structure for Research and Development of SiC (Silicon Carbide), New Material for Power Semiconductor Devices - Establishment of Expanded "R&D Partnership for Future Power Electronics Technology" and "SiC Alliance"
The structure of the "R&D Partnership for Future Power Electronics Technology (FUPET)" will be widely expanded and the "SiC Alliance" will be established.
1. What is SiC (Silicon Carbide)?
SiC is a substance used as a new material in power semiconductor devices. It saves energy (with a power loss of 1/100 or less) much more than Si (Silicon) does. It is used in inverters (electrical devices for current conversion) of next-generation automobiles. SiC is a key component in green innovation promotion.
2. Expanded FUPET
The Ministry of Economy, Trade and Industry (METI) decided to start the "New Material Power Semiconductor Device Project Toward Achieving a Low-Carbon Society" (budget for FY 2010: 2 billion yen) this year. This is a major project for green innovation promotion.
FUPET consisted of nine entities that are mainly device manufacturers. Taking the opportunity of its application for and adoption of the above project, together with other material manufacturers and automobile manufacturers, FUPET has been expanded to include those enterprises that jointly made the proposal. It is now a partnership consisting of enterprises, universities and public research institutes from upstream to downstream in the industry (25 entities).
3. Establishment of SiC Alliance
Further, the "SiC Alliance" has been established as an all-Japan framework to cover, in addition to FUPET members, a broad range of SiC-related enterprises, universities and governmental authorities.
This alliance is to overlook all SiC research and development activities done by the industrial and academic worlds and by the government so as to promote mutual collaboration among them. Such activities include a project toward development of super-high blocking voltage SiC devices (under the Funding Program for World-Leading Innovative R&D on Science and Technology promoted by the Cabinet Office for the greater international competitiveness of Japan), as well as activities by the professional group "SiC and Related Wide-Band-Gap Semiconductors" under the Japan Society of Applied Physics.
4. Future
It is expected that FUPET, which has expanded today, and the SiC Alliance will play important roles in promoting SiC research and development and introducing SiC to society. METI will continue to actively support these frameworks toward practical applications of SiC.
Release Date
May 20, 2010
Division in Charge
Research and Development Division, Industrial Science and Technology Policy and Environment Bureau
